On the Capacitance Spectroscopy of Cu2ZnSnS4 Typed Solar Cells Anisotype Heterojunction by SCAPS-1D

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dc.authoridhttps://orcid.org/0000-0002-2538-275Xen_US
dc.authoridhttps://orcid.org/0000-0002-6194-5433en_US
dc.authoridhttps://orcid.org/0000-0002-0648-2202en_US
dc.authoridhttps://orcid.org/0000-0002-6719-8328en_US
dc.authoridhttps://orcid.org/0000-0002-2465-221Xen_US
dc.authoridhttps://orcid.org/0000-0003-0327-0471en_US
dc.contributor.authorAkinrinola, Olusola
dc.contributor.authorAwodugba, Ayodeji
dc.contributor.authorJain, Momodu
dc.contributor.authorAwodele, Mojoyinola
dc.contributor.authorAkinrinola, Omowunmi
dc.contributor.authorIbiyemi, Abideen
dc.date.accessioned2021-01-29T21:56:55Z
dc.date.available2021-01-29T21:56:55Z
dc.date.issued2020en_US
dc.departmentİstanbul Gelişim Üniversitesien_US
dc.description.abstractOne of the most reliable renewable energy source is the solar energy from the sun. However, most materials have been unable to meet their potentials as a good absorber layer in thin films. Most recently, Cu2ZnSnS4 (CZTS) have been identified as a good absorber layer, yet the same problem persists. In this study, we examined the depletion capacitance vis-a-vis the voltage and range of frequencies based on heterojunction types and structures. The modeled solar cell consisted three types of materials used as buffer layer (BL) (ZnO:Al (AZO), In2S3 (IS) and CH3NH3PbCl3 (PVKT)). The band gap model of n/n/p anisotype heterojunction for the three BLs were constructed from the obtained data of the simulated solar cells. The band offsets ?EC and ?EV in electron-volts at n/n for AZO, IS and PVKT are; 0.07071 and 0.18794, 0.09768 and 0.72367 and 0.67541 and 2.54541 respectively. Also, at n/p ?EC and ?EV for AZO, IS and PVKT are; 0.14251 and 1.93251, 0.49011 and 1.73011 and 0.34041 and 1.73920 respectively. Based on the trivial AC signal that was superimposed on the dc biased charges, AZO and IS shows an exponential response of the capacitance reliance on the voltage across the depletion region. The Capacitance spectroscopy of this solar cell showed that anisotype heterojunction may be manipulated to make use of the voltage reliance on junction capacitance when the need to electronically vary it arises.en_US
dc.identifier.doi10.19072/ijet.627225en_US
dc.identifier.endpage44en_US
dc.identifier.issn2149-0104
dc.identifier.issn2149-5262
dc.identifier.issue3en_US
dc.identifier.startpage37en_US
dc.identifier.urihttps://hdl.handle.net/11363/2603
dc.identifier.urihttps://doi.org/
dc.identifier.volume6en_US
dc.language.isoenen_US
dc.publisherİstanbul Gelişim Üniversitesi Yayınları / Istanbul Gelisim University Pressen_US
dc.relation.ispartofInternational Journal of Engineering Technologiesen_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Başka Kurum Yazarıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.subjectSolar cellsen_US
dc.subjectAnisotypeen_US
dc.subjectHeterojunctionen_US
dc.subjectBand offsetsen_US
dc.subjectCapacitanceen_US
dc.subjectCZTSen_US
dc.titleOn the Capacitance Spectroscopy of Cu2ZnSnS4 Typed Solar Cells Anisotype Heterojunction by SCAPS-1Den_US
dc.typeArticleen_US

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IJET Vol. 6, Issue 3, September 2020